Dr. Kowarik entwickelt hochfrequente Röntgen-Messmethoden zur Echtzeitbeobachtung von Dünnschichtwachstum und Oberflächenprozessen. Seine aktuelle Forschung kombiniert beschleunigte X-ray-Reflektometrie (auf Mikrosekunden-Skala) mit Machine-Learning-Verfahren, um strukturelle Parameter wie Schichtdicke, Rauheit und Kristallinität automatisiert aus großen Messdatenmengen zu extrahieren. Parallel entwickelt er KI-gestützte Workflows für offene Forschungsdatenplattformen (FAIR-Prinzipien). Für die Industrie relevant: Echtzeit-Qualitätskontrolle bei Vakuumdeposition und Spin-Coating in der Halbleiter-, Optoelektronik- und Dünnschicht-Fertigung; schnellere Charakterisierung von Materialien mit hohen Abscheidungsraten.
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Dr. Stefan Kowarik
HU-FIS-Profil ↗Förderer: DFG Sonderforschungsbereich Zeitraum: 07/2011 - 06/2015 Projektleitung: Dr. Stefan Kowarik
Förderer: DFG Sonderforschungsbereich Zeitraum: 07/2013 - 06/2017 Projektleitung: Dr. Stefan Kowarik
Journal of the American Chemical Society · DOI
Using a novel layer-by-layer approach we have deposited metal−organic open frameworks (MOFs) based on benzenetricarboxylic acid ligands and Cu(II)-ions on a COOH-terminated organic surface. The deposited layers were characterized using a number of surface analysis techniques. XRD measurements show that the MOFs deposited using this method have the same bulk structure of HKUST-1.
Nano Letters · DOI
A method for biomolecular recognition is reported using light scattering of a single gold nanoparticle functionalized with biotin. Addition of streptavidin and subsequent specific binding events alter the dielectric environment of the nanoparticle, resulting in a spectral shift of the particle plasmon resonance. As we use single nanoparticles showing a homogeneous scattering spectrum, spectral shifts as small as 2 meV can be detected.
Physical Review Letters · DOI
We study kinetically controlled orientational and structural transitions of molecular thin films during growth in situ and in real time, using diindenoperylene (DIP) as an example. By time-resolved surface-sensitive x-ray scattering (out of plane and in plane), we follow the organic molecular beam deposition of DIP on silicon oxide, on stepped sapphire, and on rubrene as an organic model surface. We identify transitions for the few-monolayer (ML) regime, as well as for thick (several 10's of ML) films. We show that the differences in the interaction of DIP with the substrate change the thickness as well as temperature range of the transitions, which include (transient) strain, subtle changes of the orientation, as well as complete reorientation. These effects should be considered rather general features of the growth of organics, which, with its orientational degrees of freedom, is qualitatively different from growth of inorganics.